Gate?Tunable Negative Differential Resistance in Next?Generation Ge Nanodevices and their Performance Metrics

In the quest to push contemporary scientific boundaries in nanoelectronics, Ge is considered a key building block extending device performances, delivering enhanced functionalities. this work, quasi-1D monocrystalline and monolithic Al–Ge–Al nanowire heterostructure are embedded into novel field-effect transistor architecture capable of combining based electronics with an electrostatically tunable negative differential resistance (NDR) distinctly observable at room temperature. regard, detailed study metrics NDR presented. Most notably, highly efficient low-footprint platform demonstrated, paving way for potential applications such as fast switching multi-valued logic devices, static memory cells, or high-frequency oscillators, all implemented one fully complementary metal–oxide–semiconductor compatible Al-Ge platform.